document number: 83294 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 22-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode vemd2500x01, VEMD2520X01 vishay semiconductors description vemd2500x01 and VEMD2520X01 are high speed and high sensitive pin photodiodes in a clear epoxy, miniature surface mount package (smd) with dome lens. the photo sensitive area of the chip is 0.23 mm 2 . features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? aec-q101 qualified ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 15 ? package matched with ir emitter series vsmb2000x01 ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high speed photo detector note ? test conditions see table basic characteristics note ? moq: minimum order quantity 16758-11 vemd2500x01 VEMD2520X01 product summary component i ra (a) ? (deg) ? 0.1 (nm) vemd2500x01 12 15 350 to 1120 VEMD2520X01 12 15 350 to 1120 ordering information ordering code packaging remarks package form vemd2500x01 tape and reel moq: 6000 pc s, 6000 pcs/reel re verse gullwing VEMD2520X01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissi pation t amb ?? 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow solder profile fig. 7 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 250 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 83294 2 rev. 1.1, 22-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 vishay semiconductors silicon pin photodiode basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1v breakdown voltage i r = 100 a, e = 0 v (br) 32 v reverse dark current v r = 10 v, e = 0 i ro 110na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 4pf v r = 5 v, f = 1 mhz, e = 0 c d 1.3 pf open circuit voltage e e = 1 mw/cm 2 , ? = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , ? = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , ? = 950 nm i k 11 a temperature coefficient of i k e e = 1 mw/cm 2 , ? = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , ? = 950 nm, v r = 5 v i ra 8.5 12 17 a angle of half sensitivity ? 15 deg wavelength of peak sensitivity ? p 900 nm range of spectral bandwidth ? 0.1 350 to 1120 nm rise time v r = 10 v, r l = 1 k ? , ? = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k ? , ? = 820 nm t f 100 ns 20 1 10 100 1000 i ro - reverse dark current (na) t amb - ambient temperature (c) 94 8427 v r = 10 v 100 80 60 40 0.6 0.8 1.0 1.2 1.4 i ra, rel - relative reverse light current t amb - ambient temperature (c) 94 8416 v r = 5 v = 950 nm 0 100 80 60 40 20
document number: 83294 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 22-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - diode capacitance vs. reverse voltage fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant in tensity vs. angular displacement 0.1 1.0 10 100 0.01 i ra - reverse light current (a) e e - irradiance (mw/cm2) 16055 v ce = 5 v = 950 nm 10 1 0.1 0 2 4 6 8 0.1 c d - diode capacitance (pf) v r - reverse voltage (v) 94 8430 e = 0 f = 1 mhz 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 400 500 600 700 800 900 1000 1100 21553 - wavelength (nm) s ( ) rel - relative spectral sensitivity s rel - relative sensitivity 94 8248 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 0 0.2 0.4 ? - angular displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 83294 4 rev. 1.1, 22-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 vishay semiconductors silicon pin photodiode reflow solder profile fig. 7 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 2a, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: vemd2500x01 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c 2.2 5.8 0.2 2.77 0.2 2.3 0.2 cathode 0.5 0.05 0.1 0.254 1.1 0.1 anode 0.4 2.2 0.19 0.3 1.6 0.4 z ? 1.8 0.1 2.3 0.2 s pecication s according to din technical drawing s not indicated tolerance s 0.1 drawing-no.: 6.544-5391.02-4 pin id expo s ed copper i ss ue: 2; 18.03.10 21517 0.75 6.7 1.7 ? 2.3 0.1 s older pad propo s al acc. ipc 7351 z 20:1
document number: 83294 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 22-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 silicon pin photodiode vishay semiconductors package dimensions in millimeters: VEMD2520X01 2.2 4.2 0.2 2.77 0.2 0.05 0.254 0.6 2.2 0.19 0.3 1.6 0.4 ? 1.8 specifications according to din technical drawings not indicated tolerances 0.1 drawing-no.: 6.544-5383.02-4 issue: 4; 18.03.10 exposed copper 0.75 2.45 5.15 solder pad proposal acc. ipc 7351 21488 x x 20:1 cathode anode 0.4 2.3 0.2 2.3 0.2 0.5 pin id
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 83294 6 rev. 1.1, 22-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 vishay semiconductors silicon pin photodiode taping and reel dimensions in millimeters: vemd2500x01 issue: 2; 18.03.10 drawing-no.: 9.800-5100.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical drawings according to din specifications terminal position in tape devicce vemd2000 vemd2500 cathode anode anode cathode vsmb2000 vsmg2000 vsmy2850rg vemt2000 vemt2500 collector emitter lead i lead ii
document number: 83294 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 22-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vemd2500x01, VEMD2520X01 silicon pin photodiode vishay semiconductors taping and reel dimensions in millimeters: VEMD2520X01 drawing-no.: 9.800-5091.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 13 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21571 technical drawings according to din specifications issue: 3; 18.03.09 terminal position in tape devicce vsmb2020 vsmg2020 cathode anode anode cathode vemd2020 vemd2520 vsmy2850g vemt2020 vemt2520 collector emitter lead i lead ii
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